发明名称 Method of Forming Low Stress Multi-Layer Metallurgical Structures and High Reliable Lead Free Solder Termination Electrodes
摘要 Techniques for manufacturing a bond pad structure are provide. A method includes providing a substrate. A metal pad and passivation layer are formed over the substrate. The passivation layer includes an opening to expose a portion of the metal pad. A first film is deposited at least over the exposed portion of the metal pad. A second film is deposited over the first film. A photoresist layer is deposited over the substrate, and a trench is formed in the photoresist layer directly over the portion of the metal pad. A first layer is electroplated in the trench over the second film, and a barrier layer is electroplated in trench over the first layer. A termination electrode, comprising tin, is electroplated in the trench over the barrier layer. The photoresist layer is removed. In addition, the method can include etching to remove the second film and first film beyond a predetermined area. The termination electrode is then reflowed. The barrier layer prevents formation of an intermetallic compound in proximity to the first layer by precluding diffusion of tin from the termination electrode to the first layer. In a specific embodiment, the first layer includes stress release copper underneath a barrier layer which includes nickel.
申请公布号 US2009072396(A1) 申请公布日期 2009.03.19
申请号 US20080273238 申请日期 2008.11.18
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 WANG TSING CHOW
分类号 H01L23/488 主分类号 H01L23/488
代理机构 代理人
主权项
地址