发明名称 Polychromatic LED's and related semiconductor devices
摘要 A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
申请公布号 US7745814(B2) 申请公布日期 2010.06.29
申请号 US20040009241 申请日期 2004.12.09
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 MILLER THOMAS J.;HAASE MICHAEL A.;SUN XIAOGUANG
分类号 H01L29/06;H01L27/15;H01L33/00;H01L33/06;H01L33/28 主分类号 H01L29/06
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