| 摘要 |
PROBLEM TO BE SOLVED: To provide methods for forming recessed features (structures) at high aspect ratios on a substrate.SOLUTION: The features are formed in the context of fabricating a vertical NAND (VNAND) memory device. Embodiments involve depositing and shaping sacrificial posts 302c on a metal seed layer 310 that covers an underlying stack of materials 301, electroplating or electroless plating metal hard mask material 320 around the sacrificial posts 302c, removing the sacrificial posts 302c, and etching the underlying stack of materials 301 to form a high aspect ratio recessed feature.SELECTED DRAWING: Figure 3D |
