| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a silicon single crystal, by which a carbon concentration in a produced silicon single crystal is suppressed.SOLUTION: In one embodiment, the method of producing a silicon single crystal is provided that comprises: a selecting step SP1 of selecting polycrystalline raw materials of 5 mm square or larger in size through, for example, sieving; a filling step SP2 of filling a crucible with the polycrystalline raw materials selected in the selecting step; a melting step SP3 of melting the polycrystalline raw material in the crucible to prepare a raw material melt; and a growing step SP4 of pulling up a silicon single crystal from the raw material melt. In another embodiment, the method of producing a silicon single crystal is provided which is identical to the method in the one embodiment except that after growing the silicon single crystal in the growing step, additionally filling the crucible with the polycrystalline raw materials selected in the selecting step again, and growing second and following silicon single crystals.EFFECT: In the selecting step, the polycrystalline raw materials of 5 mm square or larger in size are selected and polycrystalline materials of small size on which many impurities stick can be prevented from being introduced into the raw material melt, so that a carbon concentration in produced silicon single crystals can be lowered.SELECTED DRAWING: Figure 1 |
