发明名称 |
NON-REACTIVE PHOTORESIST REMOVAL AND SPACER LAYER OPTIMIZATION IN A MAGNETORESISTIVE DEVICE |
摘要 |
In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device. |
申请公布号 |
US2016315253(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
US201615147682 |
申请日期 |
2016.05.05 |
申请人 |
Everspin Technologies, Inc. |
发明人 |
Deshpande Sarin A.;Aggarwal Sanjeev;Nagel Kerry Joseph;Mudivarthi Chaitanya;Rizzo Nicholas;Janesky Jason Allen |
分类号 |
H01L43/12;H01L43/08 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Chandler AZ US |