| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain the quality of film more superior than a conventional quality of film by modifying the conventional quality of film. <P>SOLUTION: This method includes a process for forming a thin film having a predetermined thickness by setting following processes of forming a first layer and forming a second layer to one cycle and repeating the cycle at least once: the process for forming the first layer including a first element on a substrate by supplying a gas containing the first element; and the process for forming the second layer including first and second elements by supplying a gas containing the second element to modify the first layer. Pressure, or pressure and a gas supply time in one process are controlled to be higher or longer than pressure, or pressure and a gas supply time in the one process when the thin film having a stoichiometric composition is formed, or, pressure, or pressure and a gas supply time in the other process are controlled to be lower or shorter than pressure, or pressure and a gas supply time in the other process when the thin film having a stoichiometric composition is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
