| 摘要 |
A memory circuit (11) comprises: a memory cell (MCij) comprising a variable-resistance element in which the resistance value varies substantially between two levels; a resistance voltage conversion circuit for converting the resistance value of a memory cell (MCij) that is to be read to a data voltage; a reference circuit (RCi) having substantially the same configuration as the variable-resistance element constituting part of the memory cell MCij, the reference circuit (RCi) comprising a serial circuit of a variable-resistance element set to the lower resistance of the two levels and a linear resistor; a reference voltage conversion circuit for converting the resistance value of the reference circuit (RCi) to a reference voltage; and a sense amplifier (SA) for distinguishing data stored in the memory cell (MCij) by comparing the data voltage and the reference voltage. |
