Manufacturing method of display device

摘要

Since a film, which is the upper layer of an interlayer insulating film and has a fast etching rate, does not have dense film quality, moisture is entered from the end portion of a substrate, and it is likely that display unevenness and the like occur. A manufacturing method of a display device includes the steps of: forming a first contact hole on the first interlayer film; forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a lower layer film and an upper layer film having an etching rate faster than an etching rate of the lower layer film; forming a second contact hole on the second interlayer film; and removing at least a part of the upper layer film.

主权项

1. A manufacturing method of a display device comprising the steps of:
(a) preparing a substrate having an electrode of a thin film transistor; (b) forming a first interlayer film on the electrode; (c) forming a first contact hole on the first interlayer film by removing a part of the first interlayer film; (j) forming a first electrode on the first interlayer film by forming a first conductive film and patterning the first conductive film; (d) forming a second interlayer film on the first interlayer film and in the first contact hole and on the first electrode, the second interlayer film having a first film and a second film provided above the first film, the second film having an etching rate faster than an etching rate of the first film; (e) forming a second contact hole on the second interlayer film in the first contact hole; (f) removing at least a part of the second film on the second contact hole and on the first electrode; (g) forming a second conductive film on the first layer of the second interlayer film and in the second contact hole; and (h) forming a second electrode by patterning the second conductive film on the second contact hole, wherein the step (a) includes preparing the substrate having the electrode of the thin film transistor in a pixel forming region and a wiring in a peripheral region outside of the pixel forming region, the step (b) includes forming the first interlayer film on the electrode in the pixel forming region and on the peripheral region, the step (c) includes removing at least a part of the first interlayer film in a first region of the pixel forming region and a part of the wiring forming region, the step (d) includes forming the second interlayer film in the first region, and the step (f) includes removing at least a part of the second film on the second interlayer film in the first region.