FinFET contact structure and method for forming the same

摘要

A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion, a first drain/source region and a second drain/source region in the first portion and on opposite sides of the first gate structure, wherein the first drain/source region and the second drain/source have concave surfaces, a second gate structure over the second portion and a third drain/source region and a fourth drain/source region in the second portion and on opposite sides of the second gate structure, wherein the third drain/source region and the fourth drain/source have the concave surfaces.

主权项

1. A method comprising:
epitaxially growing a first semiconductor material to form a first drain/source region and a second drain/source region in a semiconductor substrate; applying a first etching process to top surfaces of the first drain/source region and the second drain/source region and forming a first recess in the first drain/source region and a second recess in the second drain/source region as a result of the first etching process, wherein the first drain/source region and the second drain/source region have concave surfaces as a result of the first etching process; and forming a first drain/source contact and a second drain/source contact, wherein:
a bottom portion of the first drain/source contact is in the first recess; anda bottom portion of the second drain/source contact is in the second recess.