Method of fabricating semiconductor package, semiconductor package formed thereby, and semiconductor device including the same

摘要

The method of fabricating a semiconductor package including preparing a semiconductor wafer having a first side and a second side, the second side facing the first side, and the semiconductor wafer including a through via exposed through the first side, forming trenches at cutting areas between chip areas and at edge areas of the semiconductor wafer on the first side, stacking a semiconductor chip on the through via, forming an under fill resin layer to fill a gap between the semiconductor chip and the semiconductor wafer and to cover a side of the semiconductor chip, and forming a molding layer to cover at least a portion of the under fill resin layer and to fill at least a portion of the respective trenches may be provided.

主权项

1. A method of fabricating a semiconductor package, the method comprising:
preparing a semiconductor wafer having a first side and a second side, the second side facing the first side, and the semiconductor wafer including a through via exposed at the first side; forming trenches at cutting areas between chip areas and at edge areas of the semiconductor wafer on the first side; stacking a semiconductor chip on the through via; forming an under fill resin layer to fill a gap between the semiconductor chip and the semiconductor wafer and to cover a side of the semiconductor chip; forming a molding layer to cover the under fill resin layer and filling at least a portion of the respective trenches; and polishing the second side of the semiconductor wafer until a thickness of the semiconductor wafer is equal to or less than a depth of each of the trenches to expose the through via.