发明名称 Protrusion bump pads for bond-on-trace processing
摘要 An embodiment apparatus includes a dielectric layer in a die, a conductive trace in the dielectric layer, and a protrusion bump pad on the conductive trace. The protrusion bump pad at least partially extends over the dielectric layer, and the protrusion bump pad includes a lengthwise axis and a widthwise axis. A ratio of a first dimension of the lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.
申请公布号 US9508637(B2) 申请公布日期 2016.11.29
申请号 US201414456812 申请日期 2014.08.11
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Chen-Shien;Chen Yu-Feng;Lin Yu-Wei;Kuo Tin-Hao;Liang Yu-Min;Lin Chun-Hung
分类号 H01L21/00;H01L23/498;H01L21/48 主分类号 H01L21/00
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. An apparatus, comprising: a dielectric layer; a conductive trace in the dielectric layer, wherein the conductive trace comprises: a conductive line portion having a substantially uniform width in a top-down view of the apparatus; anda conductive trace pad portion connected to the conductive line portion, wherein the conductive trace pad portion is wider than the conductive line portion in the top-down view of the apparatus; and a protrusion bump pad disposed on the conductive trace pad portion, wherein a surface of the protrusion bump pad opposite the conductive trace is substantially level, wherein the protrusion bump pad at least partially extends over the dielectric layer, wherein the protrusion bump pad comprises a first lengthwise axis and a widthwise axis, and wherein a ratio of a first dimension of the first lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.
地址 Hsin-Chu TW