Methods for fabricating integrated circuits with isolation regions having uniform step heights

摘要

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate including an isolation region between a first device region and a second device region. The isolation region includes a first portion adjacent the first device region and a second portion adjacent the second device region. The method includes selectively etching the second portion of the isolation region to a second height. The method forms an insulation layer over the first device region and second device region. The method further includes selectively etching the insulation layer over the first device region and the first portion of the isolation region. The first portion of the isolation region is etched to a first height substantially equal to the second height.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
providing a semiconductor substrate including an isolation region between a first device region and a second device region, wherein the isolation region includes a first portion adjacent the first device region and a second portion adjacent the second device region; selectively etching the second portion of the isolation region to a second height; after selectively etching the second portion of the isolation region to the second height, forming an insulation layer including a first insulation layer portion over the first device region and a second insulation portion over the second device region; and selectively etching the first insulation layer portion and the first portion of the isolation region, wherein the first portion of the isolation region is etched to a first height substantially equal to the second height.