| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum wire structure comprising silicon series substance and a forming method of a quantum chamber structure. SOLUTION: The equally spaced parallel grooves 26 are formed by etching on the (100) face of a first silicon semiconductor substrate 12 having impurity, a residue in the groove 26 is etched by an anisotropic etching, the first form section 30 comprising adjacent two face of (111) face and having reversed triangle cross section is formed and the second form section 32 having triangle cross section successively formed to the first form section 30. The groove 26 is filled by silicon series substance, the whole surface of the substrate 12 is polished, and the upside face of the first from section 30 is exposed. A BPSG film is formed on the polished face of the substrate 12 and the second silicon semiconductor substrate are combined together. The first silicon semiconductor substrate 12, an epitaxial layer 14, and the second form section 32 are polished and removed. The quantum wire device having a quantum wire structure are formed on the silicon substrate. |
