| 发明名称 |
Process for manufacturing a wafer by annealing of buried channels |
| 摘要 |
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
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| 申请公布号 |
US7754578(B2) |
申请公布日期 |
2010.07.13 |
| 申请号 |
US20070904745 |
申请日期 |
2007.09.28 |
| 申请人 |
STMICROELECTRONICS, S.R.L. |
发明人 |
VILLA FLAVIO;BARLOCCHI GABRIELE;CORONA PIETRO |
| 分类号 |
H01L21/76;H01L29/00 |
主分类号 |
H01L21/76 |
| 代理机构 |
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