摘要 |
Solid state thermionic energy converter semiconductor diode implementation and method for conversion of thermal energy to electric energy, and electric energy to refrigeration. In embodiments of this invention a highly doped n* region can serve as an emitter region, from which carriers can be injected into a gap region. The gap region can be p-type, intrinsic, or moderately doped n-type. A hot ohmic contact is connected to the n*-type region. A cold ohmic contact serves as a collector and is connected to the other side of the gap region. The cold ohmic contact has a recombination region formed between the cold ohmic contact and the gap region and a blocking compensation layer that reduces the thermoelectric back flow component. The heated emitter relative to the collector generates an EMF which drives current through a series load. The inventive principle works for hole conductivity, as well as for electrons. |