Semiconductor integrated circuit device with capacitor formed under bonding pad

摘要

A semiconductor device is provided which includes a semiconductor substrate having a main surface. A bonding pad is formed on the main surface. A multi-layer wiring structure is disposed between the main surface and the bonding pad. The multi-layer wiring structure includes a first wiring layer, a second wiring layer, and an interlayer insulating film therebetween. The first layer, the second layer, and the interlayer film form a capacitor disposed under the bonding pad.