发明名称 |
Semiconductor memory device and magneto-logic circuit |
摘要 |
Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.
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申请公布号 |
US7755930(B2) |
申请公布日期 |
2010.07.13 |
申请号 |
US20070976007 |
申请日期 |
2007.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KEE-WON;CHO YOUNG-JIN;SHIN HYUNG-SOON;CHOA SUNG-HOON;LEE SEUNG-JUN;HWANG IN-JUN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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地址 |
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