| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the occurrence of an optical leakage current and thereby to display a high-quality image free of flickering etc., by enhancing light shielding performance to a semiconductor layer of a thin-film transistor (TFT). <P>SOLUTION: The electrooptical device is equipped with the TFT including the semiconductor layer (1a) on a substrate (10), a data line (6a) in common use as an upper light shielding film and a scanning line (11a) in common use as a lower light shielding film arranged to cover the semiconductor layer respectively from above and below, a pixel electrode (9a) supplied with an image signal through the TFT by the data line, and upper insulating films (41 and 42) arranged between the semiconductor layer and the data line and lower insulating films (12) arranged between the semiconductor layer and the data line. The angle formed by an upper segment (L2) and lower segment (L1) in Fig. is 98 to 133°. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
