| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device free from a failure in die bonding when used under high temperature environments or ultraviolet environments. <P>SOLUTION: A nitride semiconductor element 2 having a nitride semiconductor multilayer film 16 formed on a substrate 10 and diced into chips is put in a package 21. A plurality of bonding pads 17 and 18 formed on the film 16 are electrically connected with corresponding inner leads of the package. The device is structured so that a current or a voltage to the nitride semiconductor element 2 can be entirely inputted or outputted through the bonding pads 17 and 18. A metallic film 19 is deposited on the rear of the substrate 10. The metallic film 19 is adhered to the die pad 22 of the package 21 via three or more bumps 20, thereby permitting the element 2 to be die-bonded to the die pad 22. Respective contact faces of the metallic film 19, the bumps 20 and the die pad 22 are formed of high melting point materials with melting points higher than an upper limit set value for a use environmental temperature. <P>COPYRIGHT: (C)2007,JPO&INPIT |
