| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a MOSFET device capable of controlling an effective work function and a threshold voltage a metal gate electrode of various transistor types, with a simple, reproducible and effective method. SOLUTION: In fabricating a gate in an MOSFET, a FinFET or a memory device, at least a layer consisting of a dielectric material meeting the (previously) decided specifications of mobility, leak and/or EOT (equivalent oxide thickness) is grown on a semiconductor substrate, an interface layer containing a lanthanum hafnium oxide material or made thereof, preferably, made of La<SB>2</SB>Hf<SB>2</SB>O<SB>7</SB>is grown on at least an interface between a single-layer dielectric layer and a gate electrode before the gate electrode is formed, and at least one layer made of the dielectric material contacting the interface layer is differentiated from the interface layer material. A new MOSFET provided with the metal gate electrode, a gate dielectric and an interface layer is disclosed. Its manufacturing method and its application are also provided. COPYRIGHT: (C)2008,JPO&INPIT
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