OVERLAY MARK FOR FORMING MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE

摘要

An overlay mark for forming a multi-layered metal line of a semiconductor device is provided to enhance the yield of semiconductor device by implementing precisely alignment using a superior overlay mark. An overlay mark(16') for forming a multi-layered metal line of a semiconductor device is formed by arranging at least one bar(16a') at a scribe lane region. The bars are formed as a cave-in trench structure. The bars are formed constantly apart from one another so as to decrease the density of pattern. The line width of the bar is under 0.5 mum such that the density of pattern is decreased.