| 摘要 |
PROBLEM TO BE SOLVED: To allow for high breakdown voltage and high surge resistance, while suppressing up-sizing.SOLUTION: A diode 5 including a multistage pn junction 10 of a first semiconductor layer 11, a second semiconductor layer 12, a third semiconductor layer 13 and a fourth semiconductor layer 14, and a short circuit electrode 23 (short circuit member) is provided. The multistage pn junction 10 first semiconductor layer 11 is first conductivity type. The second semiconductor layer 12, forming pn junction with the first semiconductor layer 11, is second conductivity type. The third semiconductor layer 13, forming pn junction with the second semiconductor layer 12, is first conductivity type. The fourth semiconductor layer 14, forming pn junction with the third semiconductor layer, is second conductivity type. The short circuit electrode 23 (short circuit member) short-circuits the second semiconductor layer 12 and third semiconductor layer 13.SELECTED DRAWING: Figure 3 |
