| 发明名称 |
Controlled process and resulting device |
| 摘要 |
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
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| 申请公布号 |
US7759217(B2) |
申请公布日期 |
2010.07.20 |
| 申请号 |
US20070627924 |
申请日期 |
2007.01.26 |
| 申请人 |
SILICON GENESIS CORPORATION |
发明人 |
HENLEY FRANCOIS J.;CHEUNG NATHAN W. |
| 分类号 |
H01L21/30;B24C1/00;B26F3/00;B26F3/02;B32B5/16;B81C1/00;H01L21/00;H01L21/18;H01L21/20;H01L21/22;H01L21/223;H01L21/265;H01L21/301;H01L21/302;H01L21/304;H01L21/36;H01L21/38;H01L21/425;H01L21/44;H01L21/46;H01L21/461;H01L21/48;H01L21/50;H01L21/762;H01L21/78;H01L21/8238 |
主分类号 |
H01L21/30 |
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