| 摘要 |
In this bonding method, auxiliary heating processing in step S3 is performed for a semiconductor chip and a frame, between which a conductive paste comprising nanoparticles of a metal or a metal oxide is interposed. As a result of the auxiliary heating processing, voids in interfaces between a bonding layer, comprising the adhesive, and a semiconductor chip and a frame are removed. Subsequent to the auxiliary heating processing in the step S3, plasma processing in step S4 is performed by intermittently performing plasma irradiation for the semiconductor chip and the frame under reduced pressure. As a result of the plasma processing, gaps that exist within the bonding layer, which comprises the adhesive, become uniform. As a result of the auxiliary heating processing in step S3 and the plasma processing in step S4, voids at the interfaces between the bonding layer and the processed matter are removed, and therefore, bonding capability is increased. In addition, the plasma irradiation is intermittently performed, and therefore, processing temperature for the plasma processing can be suppressed. |
