| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve gain and output power by matching signal phases by adjusting inductance distributions of input and output bonding wires or input and output transmission lines, and to suppress an oscillation due to unbalanced operation of each FET cell. <P>SOLUTION: A high-frequency semiconductor device 25 includes: a field effect transistor 24 including gate terminal electrodes G1-G10, source terminal electrodes S1-S11, and a drain terminal electrode D; an input circuit pattern 17 and an output circuit pattern 18 which are disposed adjoining the field effect transistor; a plurality of input bonding wires 12, 12L configured to connect the gate terminal electrodes G1-G10 and the input circuit pattern 17; and a plurality of output bonding wires 14, 14L configured to connect the drain terminal electrode D and the output circuit pattern 18, whereby the phase of an input signal is matched by adjusting an inductance distribution of a plurality of input bonding wires 12, 12L, and whereby the phase of an output signal is matched by adjusting an inductance distribution of a plurality of output bonding wires 14, 14L. <P>COPYRIGHT: (C)2010,JPO&INPIT |
