发明名称 Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
摘要 Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation.;The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.
申请公布号 US9416445(B2) 申请公布日期 2016.08.16
申请号 US201214374728 申请日期 2012.02.08
申请人 IWATANI CORPORATION 发明人 Yoshino Yu;Koike Kunihiko;Saeda Manabu;Manabe Toshiki
分类号 C03C15/00;B05D7/22;C23C16/44;H01L21/67;C23C16/455 主分类号 C03C15/00
代理机构 Rankin, Hill & Clark LLP 代理人 Rankin, Hill & Clark LLP
主权项 1. A method for treating an inner surface in a processing apparatus using chlorine trifluoride, comprising: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, at a temperature of 20 to 60° C., to coat the inner surfaces of at least the processing chamber (1), the gas supply passage (2) and a welded connection part between pipes or between a pipe and a device in the processing chamber (1) and the gas supply passage (2) with a fluoride film, prior to the etching process using chlorine trifluoride gas.
地址 Osaka-Shi JP