RESIST PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of suppressing occurrence of pattern collapse and forming a pattern in a good shape.SOLUTION: The resist pattern forming method includes the steps of: forming a resist film on a support by using a resist composition which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid; exposing the resist film; and patterning the resist film after exposure by negative development using a developer containing an organic solvent to form a resist pattern. As the resist composition, a resist composition which contains a polymer compound having a constituent unit (a0) represented by formula (a0) and a constituent unit (a1) containing an acid-decomposable group whose polarity increases by the action of an acid is used.SELECTED DRAWING: None