SEMICONDUCTOR DEVICE HAVING GUARD METAL THAT SUPPRESS INVASION OF MOISTURE

摘要

A semiconductor device having a structure to suppress invasion of moisture into a device area is disclosed. The semiconductor device provides the device area including structure for active operations and a peripheral area surrounding the device area and having no functions for the active operations. The semiconductor device further provides a guard metal that is in direct contact to the peripheral area and arranged between a drain pad and a source electrode of the semiconductor device. The guard metal may suppress moisture invading from an opening in the drain pad into the device area.

主权项

1. A semiconductor device, comprising:
a semiconductor layer including a device area and a peripheral area surrounding the device area, the device area having active functions of the semiconductor device and the peripheral area having no active function; a gate electrode provided on the active area; a drain electrode and a source electrode provided on the active area and sandwiching the gate electrode therebetween; a pad provided on the peripheral area, the pad being connected to one of the drain electrode and the source electrode: an insulating film covering the pad and having an opening on the pad; and a guard metal provided between the pad and another of the drain electrode and the source electrode, the guard metal being in direct contact to the semiconductor layer in the peripheral area.