SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

主权项

1. The semiconductor device comprising;
a semiconductor substrate; a first insulating film formed over a main surface of the semiconductor substrate; a second insulating film formed over the first insulating film; a first conductor formed in the first insulating film; and a second conductor formed in the second insulating film; wherein an upper surface of the first conductor is formed higher than an upper surface of the first insulating film, wherein the second insulating film is formed over a part of a side of the first conductor, wherein a dielectric constant of the second insulating is lower than that of the first insulating film, wherein the second conductor is formed so as to be embedded a trench formed in the second insulating film, wherein the first conductor is electrically connected with the second conductor, wherein a first lower surface of the second conductor contacts with the upper surface of the first conductor, wherein a second lower surface of the second conductor is lower than the first lower surface of the second conductor, wherein the second lower surface of the second conductor is lower than the upper surface of the first conductor, and wherein the second lower surface of the second conductor is separated from the first insulating film.