发明名称 PHOTODIODE ARRAY AND RADIATION DETECTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a photodiode array, capable of suppressing deterioration in THE mechanical strength of semiconductor substrates caused by forming modified regions, and making the suppression effects of crosstalks improve. <P>SOLUTION: The photodiode array 1 includes: the semiconductor substrate 3; and a plurality of p-type semiconductor regions 5 that are disposed side by the side, at the back 3b side of the semiconductor substrate 3 and each compose a photodiode 13 by a p-n junction 11 to the semiconductor substrate 3. The two modified regions 50 are formed, by setting a focusing point to emit laser beams at a prescribed position, in a region between the adjacent p-type semiconductor regions 5 on the semiconductor substrate 3, while the modified regions are separated, in the arranging direction of the p-type semiconductor regions 5 and extend, in a direction of crossing the arrangement direction of the p-type semiconductor regions 5. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010165912(A) 申请公布日期 2010.07.29
申请号 JP20090007671 申请日期 2009.01.16
申请人 HAMAMATSU PHOTONICS KK 发明人 TAGUCHI TOMOYA;YONEDA MASATATSU;MURAMATSU NORIYUKI;FUJII YOSHIMARO
分类号 H01L27/146;H01L27/14;H01L31/09 主分类号 H01L27/146
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