| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can improve yield.SOLUTION: A semiconductor device manufacturing method according to an embodiment includes a step of forming a second layer, a step of forming a third layer, a step of removing a part of the second layer, a step of removing the third layer and a step of removing another part of the second layer. The second layer is formed on a first layer having a first region where a plurality of openings arranged in a first direction are provided and formed at least on a part of the inside of respective openings. The third layer is formed on the second layer and on a second region of the first layer, which is separated from the first region in the first direction. A part of the second layer is portions formed on a third region of the first layer, which is located between the first region and the second region, and formed on the first region. A part of the second layer is removed by using the third layer as a mask. Another part of the second layer is portions provided on the first region, on the second region and on the third region.SELECTED DRAWING: Figure 9 |
