发明名称 ADAPTIVE BLOCK PARAMETERS
摘要 Data programmed in a block using a first set of programming parameters is read and a number of memory cells having threshold voltages in an intermediate threshold voltage range that is between ranges assigned to logic states is determined. The number is compared to a threshold number and if the number exceeds the threshold number then subsequent programming uses a second set of programming parameters.
申请公布号 US2016314847(A1) 申请公布日期 2016.10.27
申请号 US201514692564 申请日期 2015.04.21
申请人 SanDisk Technologies, Inc. 发明人 Yang Niles
分类号 G11C16/16;G11C29/50;G11C29/52;G11C16/26;G06F11/10 主分类号 G11C16/16
代理机构 代理人
主权项 1. A method of operating a nonvolatile block-erasable memory comprising: programming data in a plurality of memory cells in a block of the nonvolatile block-erasable memory using a first set of programming parameters; subsequently performing a read operation to determine a number of memory cells of the plurality of memory cells having threshold voltages in an intermediate threshold voltage range that is between a first range assigned to a first logic state and a second range assigned to a second logic state; subsequently, comparing the number to a threshold number; and if the number exceeds the threshold number then performing subsequent programming of the block using a second set of programming parameters.
地址 Plano TX US