发明名称 |
ADAPTIVE BLOCK PARAMETERS |
摘要 |
Data programmed in a block using a first set of programming parameters is read and a number of memory cells having threshold voltages in an intermediate threshold voltage range that is between ranges assigned to logic states is determined. The number is compared to a threshold number and if the number exceeds the threshold number then subsequent programming uses a second set of programming parameters. |
申请公布号 |
US2016314847(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
US201514692564 |
申请日期 |
2015.04.21 |
申请人 |
SanDisk Technologies, Inc. |
发明人 |
Yang Niles |
分类号 |
G11C16/16;G11C29/50;G11C29/52;G11C16/26;G06F11/10 |
主分类号 |
G11C16/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a nonvolatile block-erasable memory comprising:
programming data in a plurality of memory cells in a block of the nonvolatile block-erasable memory using a first set of programming parameters; subsequently performing a read operation to determine a number of memory cells of the plurality of memory cells having threshold voltages in an intermediate threshold voltage range that is between a first range assigned to a first logic state and a second range assigned to a second logic state; subsequently, comparing the number to a threshold number; and if the number exceeds the threshold number then performing subsequent programming of the block using a second set of programming parameters. |
地址 |
Plano TX US |