| 摘要 |
An epitaxial wafer is produced without occurrence of slip or an increase in epitaxial defects while maintaining a specified oxygen concentration by pulling a silicon single crystal so that the nitrogen concentration of the crystal is 1×1011-2×1013 atoms/cm3, the crystal cooling rate is about 4.2°C/min from the silicon melting point to 1350°C and about 3.1°C/min from 1200 to 1000°C, and the oxygen concentration of the wafer is 9.5×1017-13.5×1017 atoms/cm3, heat treating a wafer sliced from the silicon single crystal under treatment conditions of 875°C for about 30 min, and then conducting epitaxial layer growth. |
