发明名称 THREE-PHASE GSHE-MTJ NON-VOLATILE FLIP-FLOP
摘要 Systems and methods are directed to a three-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, with a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter cross-coupled with a second inverter. A first data value is read out from the slave stage during a read phase of the same clock cycle that a second data value is written into the master stage during a write phase. The three-phase NVFF includes three control signals, for controlling an initialization phase of the slave stage, the read phase, and the write phase.
申请公布号 EP3100355(A1) 申请公布日期 2016.12.07
申请号 EP20150702335 申请日期 2015.01.19
申请人 Qualcomm Incorporated 发明人 WU, Wenqing;YUEN, Kendrick Hoy Leong;ARABI, Karim
分类号 H03K3/3562;G11C11/16;G11C11/18 主分类号 H03K3/3562
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