ASHING METHOD AND ITS DEVICE

摘要

PROBLEM TO BE SOLVED: To promote the collision of ions in plasma on a resist surface and to efficiently remove resist made into amorphous carbon through a means of sputtering by changing a distance between the processing surface of a body to be processed and a plasma generation means during ashing. SOLUTION: The processed body 5 is installed on a stage 3 provided with an elevating mechanism 2 and a heater 4. The prescribed amount of oxygen gas is made to flow from a gas inlet flange 10 to a processing room 1 through a discharge pipe 6 and it is set to prescribed pressure. The temperature of the processed body 5 is regulated to a temperature around the baking temperature - 150 deg.C of resist, in which the popping of resist does not occur. Ashing is executed just below plasma 9 with high-frequency power from a high-frequency power source 8. The distance between the processing surface of the processed body 5 and plasma 9 is changed during ashing, and the temperature of the processed body 5 is regulated to a temperature around 250 deg.C. Thus, damages owing to ion collisions with the processed body 5 can be suppressed.