Substrate for epitaxy of III-V compounds and a method for producing the same

摘要

An AlxGayInzN (x+y+z=1,x,y,z≥0) film is epitaxially grown, for example in a thickness of about 1.0 mu m, on one surface of a base material. Then, the opposite surface of the AlxGayInzN film to the base material is polished and thus, flattened, for example up to a surface roughness Ra of less than 10 ANGSTROM and a thickness of about 1.0 mu m. <IMAGE> <IMAGE>