SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor, in which a capacitance value of parasitic capacitance is reduced without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device, at low cost.

SOLUTION: An insulating layer other than a gate insulating layer is provided between a wire formed of the same material layer as a gate electrode of the transistor and a wire formed of the same material layer as a source electrode or a drain electrode.

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