METHOD FOR MANUFACTURING LASER DIODE

摘要

PURPOSE: A method for manufacturing a laser diode is provided to reduce the generation of an undercut by growing a current limiting layer with a uniform thickness centering around a mesa. CONSTITUTION: An n-InP clad layer(2), an active layer(3), a p-InP clad layer(4) are sequentially deposited on an upper surface of an n-InP substrate(1). A photoresist pattern is formed on an upper surface of the p-InP clad layer(4). A mesa structure is formed by etching from the p-InP clad layer(4) to the n-InP clad layer(2). The photoresist pattern is removed and an oxide layer pattern(10') is formed on a top of the mesa structure. Etching the oxide layer patter(10') is performed to form an undercut at a lower of an edge of the oxide layer patter(10') by using the oxide layer pattern(10') as a mask. A p-InP layer(8) and an n-InP layer are formed on a lateral side of the mesa structure to act as a current limiting layer.