| 摘要 |
PROBLEM TO BE SOLVED: To improve the quantum efficiency with respect to a light of short wavelength, and to improve uniformity of the dark current. SOLUTION: At least a part of a sensed light does not pass through a polysilicon layer by adopting a photodiode, thereby consequently, not interfering with accessing of the polysilicon to a sensing area. An image sensor circuit is constituted of a device structure which is utilized easily by a standard CMOS process technology. COPYRIGHT: (C)2005,JPO&NCIPI
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