发明名称 Circuit and method of testing semiconductor memory devices
摘要 A circuit for testing a semiconductor memory device includes a data comparator and a signal aligner. The data comparator compares a first output data and a second output data provided from an output buffer circuit. The data comparator determines whether logical states of the first output data and the second output data are identical to generate a comparison signal. The signal aligner aligns the first output data and the comparison signal, and generates a plurality of test signals in response to a clock signal. The test signals includes an even bit test data, an odd bit test data, an even bit comparison test data and an odd bit comparison test data. The even bit data and the odd bit data are simultaneously tested by using one pattern, and a correct test result is yielded even when test data are all inverted.
申请公布号 US2007101225(A1) 申请公布日期 2007.05.03
申请号 US20060581233 申请日期 2006.10.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MOON GIL-SHIN;HWANG SEOK-WON
分类号 G06F11/00;G01R31/28 主分类号 G06F11/00
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