SEMICONDUCTOR MEMORY DEVICE WITH CYLINDER TYPE STORAGE NODE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to reduce contact resistance by increasing contact area between a storage node contact plug and a lower electrode. CONSTITUTION: A switching element(2) is formed on a semiconductor substrate. A storage contact plug(4) for connecting to the switching element is arranged in an insulation layer. The insulation layer is recessed so that a part of the upper/side surface of the storage contact plug is exposed. A cylindrical storage node(8) includes a lower electrode which is contacted with a part of the exposed upper/side surface of the storage node contact plug.