| 摘要 |
<p>A semiconductor device and the substrate are provided to maintain the performance of the semiconductor device and to achieve downsizing of the semiconductor device. A plurality of first electrodes(14a) is formed along the first side of the surface. A plurality of second electrodes is formed along the side area facing the first side of the surface. A plurality of third electrodes(52a) is formed near the function block. The first electrode and the third electrode are connected to the inner wire. The substrate comprises the first interconnection pattern, and the second wiring pattern and the third wiring pattern. The external input terminal and the first electrode are connected to the first interconnection pattern. The external output terminal and the second electrode are connected to the second wiring pattern. The first electrode and the third electrode are connected to the third wiring pattern.</p> |
