MANUFACTURING METHOD OF PHASE CHANGE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

A manufacturing method of phase change memory device and an operating method thereof are provided to improve a cell driving strength by parallel connecting a phase change resistor device to two diodes. A first dopant region(14a) is formed inside a silicone substrate(10). A first insulated layer(16) including a bottom electrode(18) is formed on the silicone substrate. A phase change layer(20a) and a top electrode are formed on a top of the first insulated layer. The phase change layer is contacted with the bottom electrode. A second dopant region(24) is formed inside the first dopant region by using the top electrode as an ion injection mask. The silicone substrate has a SOI(Silicone On Insulator) structure made of a first silicone layer, an insulated layer, and a second silicone layer.