| 摘要 |
<p>A method of manufacturing the semiconductor device is provided to oxidize the polysilicon film part of the gate contacting with the semiconductor substrate by the radical type and to effectively improve the selective oxidation process of the metal gate. The gate insulating layer(202), the polysilicon layer(204) and metal layer(206) are successively formed on the semiconductor substrate(200). The gate(210) is formed on the semiconductor substrate by etching the metal layer, the polysilicon layer and gate insulating layer. The selective oxidation is performed to the gate by using the radical type. The metal layer can be formed with selected one among W, Mo, and Ta and Ru.</p> |
