| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent a leakage current by forming a gate oxide layer with a predetermined thickness in an upper part of a drain/source region of a transistor operated in a high voltage. A drain/source(370) is formed between element isolation films(111) to be separated with a predetermined distance. A gate oxidation layer(320) is formed in upper parts of the drain/source, the element isolation film, and a semiconductor substrate(110). The thickness of the gate oxide layer formed in the upper parts of the drain/source and the element isolation layer is thicker than the semiconductor substrate. A gate(330) is formed in a first central upper surface(321a) of the gate oxide layer. A first oxide layer(320) is formed in the side of the gate and the first edge upper side(321b) of the gate oxidation layer with the constant thickness. The nitride film is formed in the upper side of the first oxide layer and the side of the first oxide layer. A second oxide layer(360) is formed in the upper side of the nitride film and the side of the nitride film.</p> |
