| 摘要 |
A fuse element, a semiconductor memory including the fuse element, and an electronic device including the semiconductor memory are provided. According to an embodiment of the present invention, the fuse element comprises first to N^th junction terminals wherein N is a natural number which is equal to or higher than three. Dielectric breakdown between a gate terminal and each of the first to N^th junction terminals can be independently performed. Therefore, the electronic device can increase an integration rate. |
