| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silica film-fitted silicon carbide raw material capable of obtaining a silicon carbide sintered compact by reducing the occupation ratio of free carbon after sintering, a silica film-fitted silicon carbide raw material, a method for producing a silicon carbide sintered carbide, and a silicon carbide sintered compact.SOLUTION: Silicon carbide powder Pp in which the occupation ratio of free carbon is 1 wt.% or lower is heat-treated in the range of 750 to 950°C, so that a silica film F is formed on the surface of the powder.SELECTED DRAWING: Figure 1 |
