发明名称 COMPOSITION FOR PRESSURELESS SINTERED SILICON CARBIDE MATERIAL HAVING LOW-RESISTIVITY, SINTERED BODY AND THE PRODUCING METHOD OF THE SAME
摘要 The present invention relates to a composition for producing a bulk silicon carbide material, wherein the composition is produced through a non-pressure sintering scheme; a silicon carbide material; and a method for producing the same. The composition has a density range of 3.10-3.45 g/cm^3, has low resistance in a range of 510^(-3)-910^(-1) cm at a constant temperature, simultaneously represents a hardness range of 24-30 GPa, and is made of silicon carbide particles in which fine tissue has a core/shell structure. More specifically, provided are a composition for producing a silicon carbide ceramic material, a non-pressure sintering silicon carbide bulk ceramic material produced by using the same, and a method for producing the same. The composition comprises (1) micron -SiC powder added as a seed particle for promoting particle growth in sub-micron -SiC powder, (2) one or more materials selected among nitrides of Al and Ti which simultaneously serve as materials for producing a nitrogen source and a liquid as sintering additives, and (3) one or more materials selected among oxides of Y, Al, and Ca which are added to produce a liquid and to reduce a sintering temperature. The non-pressure sintering silicon carbide bulk ceramic material has a very low volume specific resistance range of 510^(-3)-910^(-1) cm at a constant temperature, simultaneously has a hardness range of 24-30 GPa at a room temperature, and is made of silicon carbide particles in which fine tissue has a core/shell structure.
申请公布号 KR20160100110(A) 申请公布日期 2016.08.23
申请号 KR20150022664 申请日期 2015.02.13
申请人 UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION. 发明人 KIM, YOUNG WOOK;CHO, TAE YOUNG
分类号 C04B35/565;C04B35/573;C04B35/64 主分类号 C04B35/565
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