SENSOR, METHOD AND SEMICONDUCTOR SENSOR

摘要

PROBLEM TO BE SOLVED: To integrate non-silicon based semiconductor devices into silicon fabrication processes.SOLUTION: Aspect ratio trapping crystal structures 138 and 140 of germanium are formed in shallow trench isolation openings of a silicon substrate 100. Germanium based semiconductor devices (photodetectors) 146 and 150 are formed in aspect ratio trapping structures 138 and 140. Components of silicon base semiconductor devices 144, 148 and 152 are formed in a pattern of the substrate 100 employing standard silicon processes.SELECTED DRAWING: Figure 5