| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce damage given to a semiconductor device when bonding. <P>SOLUTION: When spherical FAB13 is formed in a tail of a copper wire 11, load is applied to FAB13 before FAB13 is bonded to an aluminum pad 16, and a depression surface 13a depressed to the aluminum pad 16 is deformed into a planar shape. When FAB13 is depressed to the aluminum pad 16, load and supersonic vibration are applied to FAB13, and FAB13 is fixed to the aluminum pad 16. The copper wire 11 fixed to the aluminum pad 16 is formed into a loop, and the copper wire 11 is fixed to a lead 18. The depression surface 13a of FAB13 is deformed into the planar shape and it is bonded to the aluminum pad 16. Thus, load given to the aluminum pad 16 and the semiconductor device 15 can be reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT |
